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  dss5160t document number: ds35532 rev. 1 - 2 1 of 6 www.diodes.com january 2012 ? diodes incorporated dss5160t 60v low v ce(sat) pnp surface moun t transistor features ? epitaxial planar die construction ? ideal for medium power amplification and switching ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, "green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel DSS5160T-7 zp9 7 8mm 3,000 notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com marking information zp9 = product type marking code top view device s y mbol pin-out to p sot23 e b c e b c zp9
dss5160t document number: ds35532 rev. 1 - 2 2 of 6 www.diodes.com january 2012 ? diodes incorporated dss5160t maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v continuous collector current i c -1 a peak pulse collector current i cm -2 a base current (dc) i b -300 ma peak base current i bm -1 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 5) p d 725 mw thermal resistance, junction to ambient (note 5) r ja 172 c/w thermal resistance, junction to ambient air (note 4) r ja 79 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 4. operated under pulsed conditions: pulse width 100ms, duty cycle 0.25. 5. device mounted on 15mm x 15mm x1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. thermal characteristics 0.1 1 10 100 100 1m 10m 100m 1 10 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160 180 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) safe operating area t amb =25c 15mm x 15mm 1oz fr4 100s 1ms 10ms 100ms 1s dc v ce(sat) limit -v ce collector-emitter voltage (v) - i c collector current (a)
dss5160t document number: ds35532 rev. 1 - 2 3 of 6 www.diodes.com january 2012 ? diodes incorporated dss5160t electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test conditions collector-base breakdown voltage bv cbo -80 ? ? v i c = -100 a collector-emitter breakdown voltage (note 6) bv ceo -60 ? ? v i c = -10ma emitter-base breakdown voltage bv ebo -5 ? ? v i e = -100 a collector-base cutoff current i cbo ? ? -100 na v cb = -20v, i e = 0 ? ? -50 a v cb = -20v, i e = 0, t a = 150c emitter-base cutoff current i ebo ? ? -100 na v eb = -5v, i c = 0 dc current gain (note 6) h fe 200 ? ? ? v ce = -5v, i c = -1ma 150 ? ? v ce = -5v, i c = -500ma 100 ? ? v ce = -5v, i c = -1a collector-emitter saturation voltage (note 6) v ce(sat) ? ? -175 mv i c = -100ma, i b = -1ma ? ? -180 i c = -500ma, i b = -50ma ? ? -340 i c = -1a, i b = -100ma equivalent on-resistance r ce ( sat ) ? ? 340 m i e = -1a, i b = -100ma base-emitter saturation voltage v be ( sat ) ? ? -1.1 v i c = -1a, i b = -50ma base-emitter turn-on voltage v be ( on ) ? ? -0.9 v v ce = -5v, i c = -1a transition frequency f t 150 ? ? mhz v ce = -10v, i c = -50ma, f = 100mhz output capacitance c ob ? ? 15 pf v cb = -10v, f = 1mhz turn-on time t on ? 75 ? ns v cc = -10v, i c = -0.5a, i b1 = i b2 = -25ma delay time t d ? 35 ? ns rise time t r ? 40 ? ns turn-off time t off ? 265 ? ns storage time t s ? 230 ? ns fall time t f ? 35 ? ns notes: 6. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%.
dss5160t document number: ds35532 rev. 1 - 2 4 of 6 www.diodes.com january 2012 ? diodes incorporated dss5160t 0 100 200 300 400 500 600 700 800 1 10 100 1,000 -i , collector current (ma) c fig. 5 typical dc current gain vs. collector current h, d c c u r r e n t g ai n fe t = 150c a t = 25c a t = -55c a t = 85c a v = -5v ce 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 10 cb t = 85c a t = 25c a t = -55c a t = 150c a 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 7 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) t = 150c a t = 25c a t = -55c a t = 85c a v = -5v ce 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 8 typical base-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 150c a t = 25c a t = -55c a t = 85c a i = 10 cb /i 0 30 60 90 120 150 180 0.1 1 10 100 v , reverse voltage (v) r fig. 9 typical capacitance characteristics c a p a c i t a n c e (pf) c ibo c obo f = 1mhz
dss5160t document number: ds35532 rev. 1 - 2 5 of 6 www.diodes.com january 2012 ? diodes incorporated dss5160t package outline dimensions suggested pad layout sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
dss5160t document number: ds35532 rev. 1 - 2 6 of 6 www.diodes.com january 2012 ? diodes incorporated dss5160t important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, im provements, corrections or ot her changes without further notice to this doc ument and any product described herein. diodes incorporated does not assume any liabi lity arising out of the application or use of this document or any produc t described herein; neither does diodes incorporated convey any lic ense under its patent or trademark rights, nor the rights of others. any cu stomer or user of this docum ent or products described herein i n such applications shall assume all risks of such use and will agree to hold diodes incorporated and a ll the companies whose products are represented on diodes incorporated w ebsite, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customer s shall indemnify and hold diodes incorporated and its representatives harmless against all claims, dam ages, expenses, and attorney fee s arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or mo re united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to resu lt in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety-related requirements concerning their products and any use of diodes incorporated products in such safety-critical, lif e support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of di odes incorporated products in such safety- critical, life support devices or systems. copyright ? 2012, diodes incorporated www.diodes.com


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